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本文研究了X波段上半导体变容二极管在负偏压下的等效电路,提出了测量二极管Q_d值和等效电路各参数值的三种方法。第一种方法是测量二极管在各偏压点下的输入阻抗与管壳阻抗。这种方法的突出优点是适合于二极管串联电阻r_s随负偏压而变化的情况。第二种方法,在已知等效管壳电容的条件下,由测得的输入阻抗就能直接求得二极管的Q_d值和等效电路的各参数值;但此法要求串联电阻r_s不随负偏压而变化。第三种方法是测量二极管在各负偏压点下的输入阻抗与低频结电容C(V)来求得二极管的结参数;因而,为某些二极管,如砷化镓二极管,提供了一种测试方法。实验结果表明用上述三种方法所求得的Q_d值和等效电路的各参数值有很好的一致性。
This paper studies the equivalent circuit of the X-band semiconductor varactor under negative bias and proposes three methods to measure the value of diode Q_d and the equivalent circuit parameters. The first method is to measure the diode’s input impedance and the package impedance at each bias point. The salient advantage of this method is that the diode series resistance r_s changes with negative bias. The second method, the known equivalent shell and tube capacitance under the conditions of the measured input impedance can be directly obtained from the diode Q_d value and the equivalent circuit of the parameter values; However, this method requires that the series resistance r_s negative Bias changes. A third approach is to measure the diode’s junction parameters by measuring the diode’s input impedance and the low-frequency junction capacitance C (V) at each negative bias point; thus, for certain diodes, such as gallium arsenide diodes, Test Methods. The experimental results show that the Q_d values obtained by the above three methods are in good agreement with the values of the equivalent circuit parameters.