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利用基于Monte Carlo方法模拟实际物理过程的CASINO程序,研究Ga N基LED受不同能量电子辐照时电子运动和能量沉积情况等变化,得出不同能量入射电子的能量沉积情况差别较大,且入射能量较低的电子束对Ga N材料的影响较大,这与实验所得结果相符。同时还研究了低能电子束辐照时碰撞能量沉积,将介质层化合物等效为带有一定原子序数的原子,利用解析方法模拟辐照Ga N时的能量沉积。结果表明,每种化合物的传输效率都与传输深度成反比,也与化合物等价原子序数成反比;等价原子序数越小的材料,电离能量损失的峰值越小;利用有效层方法得到电子在材料内部的能量沉积规律,即由于介质之间的差异使不同介质层之间存在明显的能量传输界线。
The CASINO program based on Monte Carlo simulation of real physical processes was used to study the changes of electron motion and energy deposition of GaN-based LEDs irradiated by different energy electrons. It was found that the energy depositions of incident electrons with different energies were quite different. The lower energy electron beam has a greater effect on the Ga N material, which is consistent with the experimental results. At the same time, the collision energy deposition during low-energy electron beam irradiation was also studied. The dielectric layer compound was equivalent to atoms with a certain atomic number, and the energy deposition was simulated by analytical method. The results show that the transport efficiency of each compound is inversely proportional to the transport depth and inversely proportional to the equivalent atomic number of the compound. The smaller the equivalent atomic number, the smaller the peak of ionization energy loss. The energy deposition law within the material, that is, due to the differences between the media so that there is a clear energy transfer between the different dielectric layers.