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报道一组单片HBTVCO电路的设计、制作及其测试结果。电路采用HBT作为有源器件，PN结二极管作为变容管。S波段单片VCO的输出功率为0dBm，调谐范围100MHz，在载波频率2．84GHz处，相位噪声为－80dBc／Hz＠100kHz。以C波段单片HBTVCO的输出功率为－10dBm。这些结果表示HBT在微波与毫米波振荡器运用中具有较好的低相位噪声特性。
Report a group of monolithic HBTVCO circuit design, production and test results. HBT circuit as an active device, PN junction diode as a varactor. The output power of the S-band monolithic VCO is 0 dBm with a tuning range of 100 MHz and a phase noise of -80 dBc / Hz @ 100 kHz at a carrier frequency of 2.84 GHz. The C-band monolithic HBTVCO output power is -10dBm. These results show that HBT has good low phase noise characteristics in microwave and millimeter wave oscillator applications.