【摘 要】
：
A 0.09 mm m-plane GaN film is deposited via hydride vapor phase epitaxy (HVPE) on aγ-LiAlO2 substrate.To research the anisotropy between directions with differ
【机 构】
：
Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing Universit
论文部分内容阅读
A 0.09 mm m-plane GaN film is deposited via hydride vapor phase epitaxy (HVPE) on aγ-LiAlO2 substrate.To research the anisotropy between directions with different angles with the c-axis in the m plane,photoluminescence (PL) measurements were carried out.The results show that the electronic transition was influenced by the electric field along the c-axis,which results in an obvious anisotropy,but the influence was weakened by the hexagonal symmetry along the c-axis.
A 0.09 mm m-plane GaN film is deposited via hydride vapor phase epitaxy (HVPE) on a γ-LiAlO2 substrate.To research the anisotropy between directions with different angles with the c-axis in the m plane, photoluminescence (PL) measurements were carried out.The results show that the electronic transition was influenced by the electric field along the c-axis, which results in an obvious anisotropy, but the influence was weakened by the hexagonal symmetry along the c-axis.
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