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自从Canham观察到多孔硅(PS)的可见光致发光后,由于其可望成为可与Ⅲ—Ⅴ族半导体材料相媲美的新型光电子材料而引起了科学界极大的兴趣.目前,制备多孔硅一般都采用电化学腐蚀方法. 本文首次报导用激光束照射制备多孔硅的一种新方法.这种方法与通常采用的电化学腐蚀法不同,不用制备电极、不用通电流、只要把激光束照射到浸在HF水溶液或HF+C_2H_5OH溶液中的硅样品表面上,就在被激光束照射处形成多孔硅.通过选择激光束
Since Canham has observed the visible photoluminescence of porous silicon (PS), it is of great scientific interest due to its potential to be a new optoelectronic material that is comparable to III-V semiconductor materials. Currently, porous silicon is generally prepared Electrochemical etching method is used.This paper reports for the first time a new method for preparing porous silicon by laser beam irradiation, which is different from the commonly used electrochemical etching method, and does not need to prepare electrodes and current, so long as the laser beam is irradiated to Porous silicon was formed on the surface of the silicon sample immersed in the HF aqueous solution or the HF + C 2 H 5 O solution by being irradiated with the laser beam. By selecting the laser beam