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利用变注入强度的电致发光(EL)测试和数值模拟方法研究了微米LED大注入条件下的发光特性。EL测试结果显示,微米LED(10μm)在工作电流密度高达16kA/cm2时光功率密度输出未饱和,同时不存在明显的由于自热效应引起的发光波长红移。和300μm LED相比,相同注入水平下,10μm LED的EL峰值波长相对蓝移,表明微米LED中存在应力弛豫,10μmLED相对300μm LED应力弛豫大了约23%。APYSY模拟发现,由于应力弛豫和良好的电流扩展,微米LED中电流分布和载流子浓度更加均匀,这种均匀的分布使得微米LED具有高的发光效率,同时能够承受高的电流密度。
The luminescent properties under the condition of large LED implantation were investigated by using EL (electroluminescence) test and numerical simulation. EL test results show that the output power density of the micron LED (10μm) is not saturated at the operating current density up to 16kA / cm2, and there is no obvious red shift of the emission wavelength due to the self-heating effect. The EL peak wavelength of the 10 μm LED shifted blue relative to the 300 μm LED at the same injection level, indicating a stress relaxation in the micron LED and about 23% greater relaxation of the 10 μm LED at 300 μm. The APYSY simulation found that due to stress relaxation and good current spreading, the current distribution and carrier concentration in the micron LED are more uniform. This uniform distribution allows the micron LED to have high luminous efficiency while being able to withstand high current densities.