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报道了新研制出的160×128元GaAs/AlGaAs多量子阱长波红外焦平面器件。使用MBE的方法在半绝缘的GaAs衬底上生长器件结构;开发了用普通光刻技术和离子束刻蚀法制备2D光栅技术,以及探测器芯片与读出电路互联技术。在77 K时测试,器件的平均峰值探测率Dλ*=1.28×1010 cmW-1Hz1/2,峰值波长为λp=8.1μm,截止波长为λc=8.47μm。器件的非盲元率≥98.8%,不均匀性10%。
Reported the newly developed 160 × 128 GaAs / AlGaAs multiple quantum well long-wave infrared focal plane device. MBE method is used to grow device structure on semi-insulating GaAs substrate. 2D grating technology and ion beam etching technology are also developed. At 77 K, the average peak detection rate of the device, Dλ * = 1.28 × 10 10 cmW -1 Hz 1/2, the peak wavelength λp = 8.1 μm and the cutoff wavelength λc = 8.47 μm. Device non-blind element rate ≥ 98.8%, non-uniform 10%.