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本文概述了超高输入阻抗PMOSFET的设计与研制及目前达到的水平—阻抗最高达6×10~(16)Ω、弱电流时跨导达到20μΩ、开启电压2～3V.
In this paper, the design and development of ultra-high input impedance PMOSFET and the current level-impedance up to 6 × 10 ~ (16) Ω are introduced. The transconductance reaches 20μΩ and the turn-on voltage is 2-3V at low current.