半导体制造工艺中,干处理技术以腐蚀或抗蚀剂剥离为主。这种干处理技术可防止以往的溶液法引起的侧面腐蚀或药品污染引起的缺陷,而且具有可以省去防止公害的废液处理设备等很多优点。特别是最近,伴随着器件高密度化、高集成化的进展,研究出了反应溅射法或反应离子刻蚀法等新的干腐蚀技术,试制出了用溶液法无法实现的微细图形。 就干法加工抗蚀剂图形的显影技术来说,在能够提高尺寸精度、防止由显影液污染而发生的缺陷及简化工序的同时,通过与抗蚀剂剥离以及腐蚀等干加工技术相结合,能够实现光刻工艺大幅度干法化, Semiconductor manufacturing process, dry processing technology to corrosion or resist stripping based. This dry process prevents many of the drawbacks associated with the conventional solution-based processes such as side-etching or chemical contamination, and eliminates the need for waste-water treatment equipment to prevent pollution. Especially recently, along with the progress of high density and high integration of devices, new dry etching techniques such as reactive sputtering or reactive ion etching have been developed and fine patterns that can not be achieved by the solution method have been developed. In terms of dry-process resist pattern development techniques, the dimensional accuracy can be improved, the defects caused by the contamination of the developing solution can be prevented, and the process can be simplified. By combining the dry-process technique such as resist peeling and etching, Lithography process can achieve substantial drying,