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1.引 言 在过去的三十多年中,碲镉汞(Hg_(1-x)Cd_xTe)已经成为制造中波和长波(λ=3～30μm)红外光电探测器的最重要的半导体材料。在硅和砷化镓以后,碲镉汞就是最重要的半导体之一。就已知材料而言,还没有那一种能在基本性能和可塑性上超过它。而且,Hg_(1-x)CdxTe的晶格参数几乎恒定不变,这对于根据复式异质结结构来制造新的器件尤其重要。最初,Hg_(1-x)CdxTe的成功仅仅是因为利用组分X=0.2的这种化合物(其本征半导
1. Introduction HgCy (1-x) CdxTe) has become the most important semiconductor material in the manufacture of medium and longwave (λ = 3 ~ 30μm) infrared photodetectors for more than three decades. After silicon and gallium arsenide, mercury cadmium telluride is one of the most important semiconductors. In the case of known materials, none of them exceeds it in basic performance and plasticity. Moreover, the lattice parameters of Hg_ (1-x) CdxTe are almost invariant, which is especially important for fabricating new devices based on a multiple heterojunction structure. Initially, the success of Hg_ (1-x) CdxTe was only due to the use of such a compound of component X = 0.2