利用射频反应溅射技术在室温下制备了氢化非晶硅碳氮薄膜（ａＳｉＣｘＮｙ∶Ｈ），通过红外透射谱（ＩＲ），光吸收谱［α（λ）］，电子自旋共振谱（ＥＳＲ）和电导率（σ）等测试手段，研究了薄膜的结构和光电特性．在固定甲烷流量γＣＨ４＝３％，氢气流量γＨ２＝１２％的情况下，改变氮气流量γＮ２＝（０—１４）％，综合研究了暗电导率σｄ、光学带隙Ｅｏｐｔ、自旋密度ＮＳ等随γＮ２的变化关系，发现由于碳、氮元素同时存在，薄膜结构和特性明显地受γＮ２的调制，当γＮ２～５％时，薄膜结构和特性均有突变．对上述结果进行了较深入的讨论． Hydrogenated amorphous silicon carbonitride films (aSiCxNy:H) were prepared by RF reactive sputtering at room temperature. Their structures were characterized by infrared transmission spectroscopy (IR), optical absorption spectroscopy [α (λ)], electron spin resonance ESR) and conductivity (σ) were used to study the structure and photoelectric properties of the films. When the constant methane flow rate γCH4 = 3% and the hydrogen gas flow rate γH2 = 12%, the flow rate of nitrogen gas γN2 = (0-14)% was changed and the dark conductivity σd, optical band gap Eopt and spin density NS γN2. The results show that due to the coexistence of carbon and nitrogen, the structure and properties of the films are obviously modulated by γN2. When the content of γN2 ~ 5%, the structures and properties of the films are changed. The above results were discussed in more depth.