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An innovative heterojunction is fabricated between two sides of a freestanding thin film of HCl-doped polyaniline(PANI) derivative containing azobenzene side-chain,which is synthesized through an N-alkyl-substituted reaction.Of the film,the side with being irradiated by UV light during preparation is represented as ’A side’;the other side without being irradiated is represented as ’N side’.The electrical properties of the heterojunction are measured and the rectifying effect is observed in the current-voltage characteristic curves with the values of rectifying ratio(γ) being 20 at ±0.06 V at T = 77 K and 4 at ±0.02 V at T = 300 K separately.
An innovative heterojunction is fabricated between two sides of a freestanding thin film of HCl-doped polyaniline (PANI) derivative containing azobenzene side-chain, which is synthesized through an N-alkyl-substituted reaction. UV light during preparation is represented as ’A side’; the other side without being irradiated is represented as ’N side’. The electrical properties of the heterojunction are measured and the rectifying effect is observed in the current-voltage characteristic curves with the values of the rectifying ratio (γ) being 20 at ± 0.06 V at T = 77 K and 4 at ± 0.02 V at T = 300 K separately.