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介绍了ＰｔＳｉ／ｐ－Ｓｉ肖特基势垒红外探测器（简称ＩＲ－ＳＢＤ）的优化结构及探测机理，给出了探测器的光增益模型，并对器件进行了制作及性能测试。器件在７７Ｋ下，反偏４Ｖ时的反向漏电流为５×１０（－６）μＡ，对１．５２μｍ红外光的灵敏度为２．６９×１０（－２）Ａ／Ｗ，量子效率为２．４％。
The optimal structure and detection mechanism of PtSi / p-Si Schottky barrier infrared detector (IR-SBD) are introduced. The optical gain model of the detector is given, and the fabrication and performance testing of the device are carried out. The reverse leakage current of the device is 5 × 10 (-6) μA at 77K with a reverse bias of 4V, the sensitivity of 2.69 × 10 (-2) A / W to 1.52μm infrared light and the quantum efficiency of 2 .4%.