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卫星通信技术的发展需要能在Ku波段以上工作的GaAs功率FET,但在Ku波段,高功率FET芯片尺寸与信号波长可相比拟,而难以向大FET的每个胞都均匀地馈通微波信号。此外,还需减小芯片的串联源电感等寄生电抗和热阻,以使功率FET达到实际应用。 本研究通过下面两个途径来克服Ku波段频率下其增益和功率下降的问题。 (1)器件设计采用密集沟道。将2,4001μm栅宽四胞FET设计在400μm有源区长度以内,使各胞同相位工作;
The development of satellite communication technology requires GaAs power FETs capable of operating above the Ku band, but at the Ku band, the size of the high power FET chip can be compared to the signal wavelength and it is difficult to feed the microwave signal evenly to each cell of a large FET . In addition, the need to reduce the series inductance of the chip parasitic reactance and thermal resistance, so that the power FET to practical application. This study overcomes the problem of gain and power loss at Ku-band frequencies by the following two approaches. (1) device design using intensive channels. The 2,4001μm gate-width quadruple FETs are designed to be within 400μm of active area length to allow each cell to work in phase.