由于直拉重掺锑硅单晶存在截面电阻率均匀性差、杂质管道、杂质条纹、析出、位错等问题,在生产中不仅产品成品率低,而且产品的质量和数量都不能满足器件生产的需要。本文研究产生上述问题的诸因素,分析目前国内拉制重掺锑硅单晶的工艺和几种典型的热系统,提出运用减压拉晶法制备重掺锑硅单晶的工艺。这项工艺对提高直拉重掺锑硅单晶的质量和成品率都有明显的效果。 Due to the problems of poor cross-section resistivity uniformity, impurity channels, impurity stripes, precipitation and dislocation, the production of single-crystal antimony-doped silicon is not only low in product yield, but also the quality and quantity of products can not meet the requirements of device production need. In this paper, we study the factors that cause the above problems, and analyze the current domestic technology of drawing heavy antimony-doped silicon single crystal and several typical thermal systems. This process has a significant effect on improving the quality and yield of Czochralski silicon single crystals.