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极紫外光刻技术(EUVL)利用波长为13.5 nm的极紫外(EUV)光源,可以轻松突破30 nm技术节点而实现大规模工业生产。毛细管放电直接将电能转换成等离子体的极紫外辐射能,具有较高的能量转换效率。毛细管放电三束等离子体极紫外耦合光源利用激光等离子体(LPP)的热膨胀力与三束等离子体所受的洛仑兹力相互作用,耦合出较大面积的极紫外辐射区,从而在满足用光要求的前提下大幅度地降低毛细管放电的重复频率,有利于光刻生产。在实现三对电极同时放电以及放电与激光同步触发的基础上,探讨了激光对耦合光源所起的作用。实验发现位置耦合对极紫外光源的影响很小,激光等离子体引起的动力耦合成为问题的关键,有待于逐步解决。
Extreme Ultraviolet Lithography (EUVL) EUVL light sources with a wavelength of 13.5 nm allow large-scale industrial production to be easily achieved by breaking 30 nm technology nodes. Capillary discharge directly converts electrical energy into plasma ultraviolet radiation, with high energy conversion efficiency. Capillary discharge three-beam plasma EUV coupling light source using the laser plasma (LPP) thermal expansion force and the three LENSEN plasma Lorentz force interaction, coupling a large area of EUV radiation area, so as to meet the Light requirements under the premise of significantly reduce the repetitive frequency of capillary discharge is conducive to lithography production. On the basis of realizing the simultaneous discharge of three pairs of electrodes and the triggering of discharge and laser synchronization, the effect of laser on the coupling light source is discussed. The experimental results show that the position coupling has little effect on the EUV light source, and the power coupling caused by the laser plasma becomes the key issue, which needs to be solved step by step.