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DLTS测量发现,在原生掺氮区熔硅单晶中,除E_c-0.20eV、E_c-0.28eV与氮相关外,E_c-0.57eV能级也与氮相关.此三能级在低于400℃、经0.5 小时退火均消失,同时测得三个与氮相关的新能级E_c-0.17eV、E_c-0.37eV和E_c-0.50eV,并研究了它们的退火行为.
The DLTS measurements show that the E_c-0.57eV energy level is also related to nitrogen in the native nitrogen-doped fused-silicon single crystals, except E_c-0.20eV and E_c-0.28eV, which are related to nitrogen. After 0.5 hour annealing, three new nitrogen levels E_c-0.17eV, E_c-0.37eV and E_c-0.50eV were measured and their annealing behaviors were also investigated.