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由于Ｓｉ是一种禁带宽度只有１．１ｅＶ的间接带隙材料，其发光效率极低，因此长期以来Ｓｉ被认为是一种不可能用于制作可见光区光电器件的材料．但近一两年才出现的多孔硅光致发光现象，对人们的这种传统概念产生了巨大的冲击，一股多孔硅的研究热潮也正在兴起．本文将结合作者在多孔硅方面的工作，对多孔硅光致发光现象的研究背景、现状和潜在的应用作了较详细的介绍．
Since Si is an indirect bandgap material with a forbidden band width of only 1.1 eV and its luminous efficiency is very low, Si has long been considered as a material that can not be used in the manufacture of a photoelectric device in the visible region. However, the phenomenon of porous silicon photoluminescence that appeared in the last year or so has had a huge impact on this traditional concept of people. A wave of research on porous silicon is also on the rise. This article will be combined with the author’s work in porous silicon, the research background, current status and potential applications of porous silicon photoluminescence were described in more detail.