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MOS存贮器发展迄今已有十多年历史。目前国外在数字计算机中MOS存贮配,而器已被人们广泛地采用。目前有两种形式,一种为了获得更高速度,并且与双极逻辑电路相匹采用了双极互补型边界电路;另一种主要是为了进一步提高集成度(相应的也能提高速度),而采用了全MOS边界电路。本所于1968年与北京地质仪器厂共同研制的MOS存贮器,系采用双极型边界电路。本文介绍一种MOS存贮器双极读写电路的工作原理、主要参数设计和运行情况,以及读写电路组件化工作。至于文中所引用到的有关MOS存贮组件的内容,参见文献。
MOS memory development so far more than 10 years of history. At present, foreign countries in the MOS digital computer storage, and device has been widely used. There are two forms currently available, one for bipolar complementary boundary circuits for higher speed and bipolar logic, and the other mainly for further integration (which in turn increases the speed) Instead, a full MOS boundary circuit is used. The Institute in 1968 and Beijing Geological Instrument Factory co-developed MOS memory, the Department of bipolar boundary circuits. This article describes a MOS memory bipolar read and write circuit works, the main parameters of the design and operation, as well as read and write circuit components work. For the contents of the MOS memory components referenced in this document, see the literature.