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研究了具有OTS/SiO2双绝缘层结构及MoO3/Al电极结构的有机薄膜晶体管.器件是以热生长的SiO2作为有机薄膜晶体管的栅绝缘层,酞菁铜作为有源层的.OTS/SiO2双绝缘层的结构提高了器件的场效应迁移率和开关电流比,降低了阈值电压.实验表明在同样的栅极电压下,具有MoO3/Al电极的器件和金电极的器件有着相似的源漏输出电流.结果显示具有OTS/SiO2双绝缘层及MoO3/Al电极结构的器件能有效改进有机薄膜晶体管的性能.
The organic thin film transistor with OTS / SiO2 double-insulated layer structure and MoO3 / Al electrode structure was studied. The device was grown by thermal growth of SiO2 as the gate insulating layer of organic thin film transistor and copper phthalocyanine as the active layer. The structure of the insulating layer increases the field-effect mobility and the switching current ratio of the device, and decreases the threshold voltage. Experiments show that devices with the MoO3 / Al electrode and the gold electrode have similar source-drain outputs at the same gate voltage Current.The results show that the device with OTS / SiO2 double insulation layer and MoO3 / Al electrode structure can effectively improve the performance of the organic thin film transistor.