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现已计算了增强电荷耦合器件(ICCC)中与氧化硅层吸收X射线总剂量有关的电压和电子流量,该器件是以背面电子照射形式工作。计算是依据光谱强度分布和实际器件Si-SiO_2界面的纯剂量测量进行的。它表明:微量的入射电子能被转换成产生并透过约10μm硅片的X射线,在1万电子伏时约1×10~(-4),在2万电子伏时约3×10~(-4)。在发射的X射线总能量中,差不多1.5％被100nm的SiO_2所吸收。在1.732千电子伏时,X射线能的85—97％是在特性曲线Kα线中。从10μmSi片背面入射,淀积在SiO_2内每一个电子的剂量是D=9.7×10~(-14)E(keV)~2·~2rad(SiO_2)/e~-cm~(-2),从13μm硅片背面入射,淀积在SiO_2里的每一个电子的剂量D=3.5×10~(-14)E(keV)~2·~(44)rad(SiO_2)/e~-cm~(-2)。在阴天星光亮度条件下(～10~(-4)lux),以10,15,20kV电压工作的标准ICCD的氧化物里,剂量淀积的速率分别是2.3,6.3,12.7rad(SiO_2)/小时。对应这些剂量的比率,特别是在工作电压降低的条件下工作时,希望兆拉德淬火的电荷耦合器件在微光ICCD电视摄象管里有长达10万小时的有效工作寿命。
The voltage and electron fluxes associated with the total absorbed X-ray dose of the silicon oxide layer in an enhanced charge-coupled device (ICCC) have now been calculated and the device is operated with backside electron irradiation. The calculation is based on the spectral intensity distribution and the pure dose measurement at the Si-SiO 2 interface of the actual device. It shows that a small amount of incident electrons can be converted into X-rays generated and transmitted through about 10 μm silicon wafer, about 1 × 10 -4 at 10,000 electron volts, about 3 × 10 -4 at 20,000 electron volts, (-4). In the total energy of the emitted X-rays, almost 1.5% is absorbed by 100 nm SiO 2. At 1.732 keV, 85-97% of the X-ray energy is in the Kα line of the characteristic curve. The dose of each electron deposited in SiO 2 from the back of 10 μm Si wafer is D = 9.7 × 10 ~ (-14) E (keV) ~ 2 ~ 2 ~ 2rad (SiO 2) / e ~ -cm -2. The dose of each electron deposited in SiO 2 is about 3.5 × 10 ~ (-14) E (keV) ~ 2 · ~ (44) rad (SiO_2) / e ~ -cm ~ -2). The rates of dose deposition were 2.3, 6.3 and 12.7 rad (SiO 2) respectively in the standard ICCD oxide operating at 10, 15 and 20 kV under cloudy daylight conditions (~10 ~ (-4) lux) /hour. Corresponding to the ratio of these dosages, especially when operating at reduced operating voltages, it is hoped that the MEGAD quenching charge-coupled device will have an effective operating life of up to 100,000 hours in low light ICCD video cameras.