取向硅钢中{114}<418>织构对二次再结晶时晶粒异常长大的影响

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运用EBSD技术观察Hi B钢在大压下率冷轧条件下薄规格样品的二次再结晶行为,从而研究薄规格样品二次再结晶难以发生的原因.通过渗氮处理添加抑制剂使二次再结晶能顺利发生,并研究渗氮量对薄规格样品二次再结晶的影响,以及{114}<418>织构对黄铜与Goss取向晶粒异常长大的影响.结果表明,在二次再结晶退火时,相对于其它取向的晶粒,两侧表层的{114}<418>取向附近的晶粒具有明显的长大优势,并向中心层生长,如果样品表层抑制剂强度不足,其容易长大到样品的中心层吞并掉二次再结晶的核心而不利于二次再结晶的发生,经渗氮补充抑制剂后能有效抑制表层晶粒的长大,从而有利于二次再结晶的发生和磁性能的提高;在二次再结晶初期,{114}<418>取向附近的晶粒容易保留在发生异常长大的偏转Goss取向晶粒和黄铜取向晶粒的中心处并形成岛晶而不利于它们的异常长大,但该取向的晶粒对Goss取向晶粒异常长大的影响较小. The secondary recrystallization behavior of thin gauge samples of Hi B steel under cold rolling with large reduction ratio was observed by EBSD technique to study the reasons why secondary recrystallization of thin gauge samples was hard to occur.The addition of inhibitors by nitriding treatment made secondary The recrystallization can occur smoothly and the effect of nitriding on the secondary recrystallization of the thin-gauge samples and the effect of {114} <418> texture on the abnormal growth of brass and Goss-oriented grains have been studied. The results show that in the second During the secondary recrystallization annealing, the grains near the {114} <418> orientation of the two surface layers have obvious growth advantages and grow towards the central layer relative to the other oriented grains. If the intensity of the sample surface layer inhibitor is insufficient, It is easy to grow up to the center of the sample swallowed the core of secondary recrystallization detrimental to the occurrence of secondary recrystallization, nitriding replenishment inhibitors can effectively inhibit the growth of surface grains, which is conducive to secondary The occurrence of crystallization and the improvement of magnetic properties. In the early stage of secondary recrystallization, the grains near the {114} <418> orientation easily remain at the center of the abnormally grown deflected Goss-oriented grains and brass-oriented grains Formation of island crystals is not conducive to their abnormal growth, Less affected by grain orientation of the abnormal growth of Goss oriented grains.
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