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通过衬底材料和外延材料的交替生长方式制备出多层排列的自组装量子点超晶格结构.这些埋置量子点的应力/应变场影响着它们的光电性能、压电性能以及力学稳定性.基于各向异性弹性理论的有限元方法,研究了埋置金字塔形应变自组织Ge/Si半导体量子点的应力/应变分布以及流体静应变和双轴应变分布,并与非埋置量子点的应力/应变分布做了比较,指出了它们之间的异同以及覆盖层对量子点应力/应变分布的影响.
Multilayered self-assembled quantum dot superlattice structures were fabricated by alternate growth of substrate and epitaxial materials.The stress / strain fields of these embedded QDs affected their optoelectronic properties, piezoelectric properties, and mechanical stability Based on the finite element method of anisotropy elastic theory, the stress / strain distribution, the static strain and the biaxial strain distribution of buried pyramid - shaped self - organized Ge / Si semiconductor quantum dots are investigated and compared with those of non - buried quantum dots The stress / strain distributions are compared, and the similarities and differences between them and the influence of overburden on the stress / strain distribution of quantum dots are pointed out.