用微波ＥＣＲ等离子体溅射技术制备透明导电ZnO（Ａ１）膜的工艺中，氧气和氩气的流量、膜的生长温度等因素相互制约并严重影响着膜的光电性能．实验得出：存在着一个温度和相应的氧流量区，在此区域内，沉积的ＺｎＯ（Ａ１）膜既有较高的透光性又有较高的导电性．本工作在一定条件下制备出电阻率约为１０-5Ω·ｍ数量级、可见光区域平均透光率Ｔvi约为８５％的透明导电ＺｎＯ（Ａ１）膜． In the process of preparing transparent conductive ZnO (A1) film by microwave ECR plasma sputtering technology, the flow of oxygen and argon, the growth temperature of the film and other factors restrict each other and seriously affect the photoelectric properties of the film. Experiments show that there is a temperature and the corresponding oxygen flow area, in this region, the deposited ZnO (A1) film has both high transparency and high conductivity. Under certain conditions, this work prepared a transparent conductive ZnO (A1) film with the resistivity of about 10-5Ω · m and the average transmittance of visible light region Tvi about 85%.