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用ＳｉＣｌ＿４常压高温外延制备的非掺杂ＳｉＧｅ合金膜，兼有Ｓｉ与化合物的优点，而不存在他们各自的缺点，且和Ｓｉ集成电路工艺相容；并将此技术应用于Ｓｉ－ＳｉＧｅ－Ｓｉ突变光波导器件。
SiCl_4 atmospheric pressure high temperature epitaxial preparation of undoped SiGe alloy film, both the advantages of Si and compounds, without their respective shortcomings, and compatible with Si integrated circuit technology; and the application of this technology Si-SiGe- Si mutant optical waveguide device.