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采用有限元方法,仿真研究了不同层数和材料厚度比的铜钼叠层基板对芯片散热特性的影响。结果表明,2层和3层的铜钼叠层材料均可以有效综合Cu高热导率和Mo低膨胀系数的优点。在相同铜钼总厚度比的情况下,相比于2层材料,3层材料可以实现更好的散热特性。对于1mm的基板厚度,铜钼铜厚度比为0.2∶0.6∶0.2时可以同时实现较低的温度和热应力。通过调整基板结构参数,可以显著改变芯片的最高温度和最大热应力,满足不同封装领域的需求。
The finite element method was used to simulate the influence of the copper-molybdenum clad laminate with different layers and material thickness ratio on the heat dissipation characteristics of the chip. The results show that both the 2-layer and 3-layer Cu-Mo laminated materials can effectively combine the advantages of high Cu thermal conductivity and Mo low expansion coefficient. With the same copper-molybdenum total thickness ratio, the 3-layer material achieves better heat dissipation characteristics than the 2-layer material. For a substrate thickness of 1 mm, a lower temperature and thermal stress can be achieved simultaneously with a copper-molybdenum-copper thickness ratio of 0.2: 0.6: 0.2. By adjusting the substrate structure parameters, can significantly change the chip maximum temperature and maximum thermal stress, to meet the needs of different packaging areas.