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采用高温固相反应法制备出稀释磁性半导体(In0.9-xFe0.1Cux)2O3(x=0~0.03)。分别用XRD和VSM对样品的结构和性能进行了表征。研究表明:样品在0≤x≤0.01时,均为单相结构且晶格常数随Cu的含量x的增大而减小;而x>0.01后,出现杂质相且晶格常数随Cu的含量x的增大而增大。在无Cu掺杂和高掺杂时样品均表现为室温顺磁性,而Cu适量掺杂的样品在室温下具有铁磁性,研究表明室温铁磁性与载流子浓度、3d原子浓度密切相关。
The diluted magnetic semiconductor (In0.9-xFe0.1Cux) 2O3 (x = 0 ~ 0.03) was prepared by high temperature solid-state reaction. The structure and properties of the samples were characterized by XRD and VSM respectively. The results show that the samples are all single phase when 0≤x≤0.01 and the lattice constant decreases with the increase of Cu content. When x> 0.01, the impurity phase appears and the lattice constant changes with the content of Cu x increases and increases. The sample exhibits paramagnetic at room temperature in the absence of Cu doping and high doping, while the Cu doped doping has ferromagnetism at room temperature. The results show that the room temperature ferromagnetism is closely related to the carrier concentration and 3d atom concentration.