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结合了“栅极工程”和“应变工程”二者的优点,异质多晶SiGe栅应变Si MOSFET,通过沿沟道方向使用不同功函数的多晶SiGe材料,在应变的基础上进一步提高了MOSFET的性能.本文结合其结构模型,以应变Si NMOSFET为例,建立了强反型时的准二维表面势模型,并进一步获得了其阈值电压模型以及沟道电流的物理模型.应用MATLAB对该器件模型进行了分析,讨论了异质多晶SiGe栅功函数及栅长度、衬底SiGe中Ge组分等参数对器件阈值电压、沟道电流的影响,获得了最优化的异质栅结构.模型所得结果与仿真结果及相关文献给出的结论一致,证明了该模型的正确性.该研究为异质多晶SiGe栅应变Si MOSFET的设计制造提供了有价值的参考.
Combining the advantages of both “gate engineering” and “strain engineering”, hetero-polycrystalline SiGe gate-strained Si MOSFETs are fabricated on polycrystalline SiGe materials with different work functions along the channel direction, And further improve the performance of the MOSFET.This paper combined with its structural model, strained Si-NMOSFET as an example, the establishment of a strong inverse quasi-two-dimensional surface potential model and further obtained its threshold voltage model and the channel current physical model The model of the device is analyzed by MATLAB and the influence of the work function and gate length of the hetero polycrystalline SiGe gate, the Ge composition of the substrate SiGe and other parameters on the threshold voltage and channel current of the device are discussed, and the optimized Heterogeneous gate structure.The results of the model are in good agreement with those of the simulation results and the related literatures, which proves the correctness of the model.The research provides a valuable reference for the design and fabrication of heterojunction SiGe gate-strained Si MOSFETs.