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为了提高Ⅳ-Ⅵ族中红外激光器的工作温度,采用分子束外延生长技术,在Cd0.96Zn0.04Te(111)衬底上外延生长了以PbTe/Pb1-xSrxTe量子阱为有源区的p-n双异质结发光二极管。高分辨X衍射(HRXRD)和光致发光谱(PL)测量表明,PbTe/Pb1-xSrxTe量子阱具有很好晶体质量和发光特性。制作的二极管I-V特性测量显示正向工作开启电压为0.35V左右,工作电流1.6mA。正向耐压特性表明二极管可承受70mA的电流注入,表明二极管具有很好的正向开启电压和反向截止电压。
In order to improve the operating temperature of Ⅳ-Ⅵ intermediate infrared laser, the epitaxial growth of pn bis (p-n-dodecene) -based p-xTrxTe quantum wells on the Cd0.96Zn0.04Te (111) Heterojunction Light Emitting Diode. High-resolution X-ray diffraction (HRXRD) and photoluminescence (PL) measurements show that PbTe / Pb1-xSrxTe quantum wells have good crystal quality and luminescent properties. The diode I-V characteristic measurement made shows that the positive working voltage is about 0.35V and the working current is 1.6mA. The positive withstand voltage characteristics indicate that the diode can withstand 70mA current injection, indicating that the diode has good forward turn-on voltage and reverse turn-off voltage.