引言在近代光电子学研究与生产中,需要制备各种非晶或单晶薄膜,通常使用的工艺方法有蒸发(电阻蒸发,电子束蒸发,激光蒸发,反应蒸发,以及离子镀)、溅射(阴极溅射,射频溅射,等离子体溅射)、化学汽相淀积、外延(汽相外延,液相外延,分子束外延)等等。现在这一工艺家族中又出生了一个新的成员一原子层外延(ALE—Atomic Layer Epitaxy)。 Introduction In the modern optoelectronics research and production, the need for the preparation of a variety of amorphous or single crystal film, the commonly used methods are evaporation (resistance evaporation, electron beam evaporation, laser evaporation, reactive evaporation, and ion plating), sputtering Sputtering, RF sputtering, plasma sputtering), chemical vapor deposition, epitaxy (vapor phase epitaxy, liquid phase epitaxy, molecular beam epitaxy) and the like. A new member, ALE-Atomic Layer Epitaxy, was born in this process family.