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自从美国蒙三托公司采用GaAs单晶做为衬底的气相外延生长法(PVE)工业生产GaAs_-xP_x单晶以来,便确立了大量使用Ⅲ—V族化合物半导体单晶的地位。红色发光元件用的GaAs_1-xGa_xP/GaAs生长技术,对于以GaP做衬底的黄色发光元件用GaAs_1-xP_x/GaP单晶、In_1-xGa_xP/GaP单晶和绿色发光元件用的GaP(N)~*/GaP单晶的生长技术带来了很大的影响。
The production of GaAs_xP_x single crystals by the vapor phase epitaxy (PVE) using GaAs single crystal as the substrate by Monta Santos of the United States has established a large use of group III-V compound semiconductor single crystals. The GaAs_1-xGa_xP / GaAs growth technique for a red light-emitting device is a GaAs_1-xGa_xP / GaP single crystal for a yellow light-emitting device using GaP as a substrate, GaP * / GaP single crystal growth technology has brought a great impact.