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我组在高压单晶炉里用液封合成与生长单晶的工艺,前不久拉制出了掺Fe半绝缘InP单晶.单晶重约180克.由于所用工艺方法的特点是合成时间短,磷蒸汽与石英容器壁的接触面积小,故容器沾污少.未掺杂晶体的净电子浓度N_D-N_A≤5×10(15)cm~(-3),液氮迁移率μ_(77k)≥25000cm~2/V·s.只需加入180～200ppm的Fe于熔体中就可获得半绝缘性能的InP单
I group in the high-pressure single-crystal furnace with liquid seal synthesis and growth of single crystal process, shortly drew a Fe-doped semi-insulating InP single crystal weight of about 180 grams. Due to the characteristics of the process used is a short synthesis time , Phosphorus vapor and quartz container wall contact area is small, so less contamination of the container.The net electron density of the undoped crystal N_D-N_A≤5 × 10 (15) cm ~ (-3), liquid nitrogen mobility μ_ (77k ) ≥25000cm ~ 2 / V · s.Only need to add 180 ~ 200ppm Fe in the melt can be obtained in the semi-insulating properties of InP alone