论述了IGBT门极驱动器设计新方案,它具有先进的保护功能,如元件采用双电平开通以减小峰值电流,采用双电平关断以限制过电压,以及防止出现桥臂贯通的有源密勒箝位。此外还介绍一种包括双电平关断驱动器和有源密勒箝位功能的新电路,并对所述功能的试验及结果进行阐述,重点介绍双电平关断驱动器的中间电平对IGBT过电压的影响。 The new design of IGBT gate driver is discussed. It has advanced protection functions such as bi-level switching of components to reduce peak current, bi-level shutdown to limit overvoltage, and active Miller clamp. In addition, a new circuit including a two-level turn-off driver and an active Miller clamping function is also introduced. Experiments and results of the functions are also described. The emphasis is placed on how the middle level of the two-level turn-off driver can effectively prevent the IGBT Overvoltage effects.