A kind of 2 GHz to 8GHz MMIC variable gain low noise amplifier chip,WFD0 0 2 0 ,was designed,and fabricated successfully with0 .5 μm PHEMT technology of3”Ga As wafer foundry in Nanjing Elec-tronics Devices Inst.(NEDI) in2 0 0 2 .The chip was composed of A kind of 2 GHz to 8 GHz MMIC variable gain low noise amplifier chip, WFD0 0 2 0, was designed, and fabricated successfully with 0.5 μm PHEMT technology of 3 "Ga As wafer foundry in Nanjing Electronics Devices Inst. (NEDI) in2 0 0 2. The chip was composed of