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日本科学技术厅金属材料研究所最近已使AlInSb/GaInsb/AlInSb双异质结外延生长获得成功。它是通过用AlInSb抑制保护层将GaInSb活性层由两侧夹住以构成双异质结,然后在晶格常数不同的衬底上外延生长成薄膜而实现的。目前在2～3μm波段的中红外光范围内振荡的半导体激光器,因缺乏能使GaInSb、AlInSb外延生长且晶格常数又相匹配的衬底材料而无法实现。该研究所通过将GaInSb作为松弛晶格应变的缓冲层而解决了上述
Japan Institute of Science and Technology Metal Materials Institute recently AlInSb / GaInsb / AlInSb double heterojunction epitaxial growth success. It is achieved by sandwiching the GaInSb active layer from both sides with a AlInSb inhibition protective layer to form a double heterojunction and then epitaxially grow into a thin film on a substrate with a different lattice constant. At present, the semiconductor lasers oscillating in the mid-infrared range of 2~3 μm can not be realized due to the lack of substrate materials that can epitaxially grow GaInSb and AlInSb and match the lattice constants. The Institute solved the above problem by using GaInSb as a buffer layer for relaxing lattice strain