采用扫描电子显微镜分别观察了用不同研磨机研磨、抛光及其经溴-乙醇腐蚀的ＨｇＣｄＴｅ体单晶片的表面二次电子衬度像．观察表明，研磨造成的晶片表面可见损伤，经机械和溴-乙醇化学抛光后将减少和去除。然而，化学抛光却造成个别表面凹陷和凸出，这些凹凸可能是溴-乙醇对表层夹杂物和基质的腐蚀速度不同所致。 Scanning electron microscope (SEM) was used to observe the surface secondary electron contrast images of HgCdTe bulk single crystal wafers polished by different grinders and polished by bromine - ethanol. Observations have shown that damage on the wafer surface caused by grinding is reduced and removed by mechanical and bromine-ethanol chemical polishing. However, chemical polishing caused individual surface dents and protrusions, which may be due to the different rates of corrosion of surface inclusions and matrix by bromine-ethanol.