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报道了用离子注入方法和组合技术制备的 Al Ga As/Ga As单量子阱多波长发光集成芯片 ,利用量子阱界面混合原理在同一块 Ga As衬底片上获得了 2 0多个发光波长从 787～ 72 4nm的 Ga As量子阱发光单元 ,研究了不同剂量的 As和 H离子分别单独注入和迭加组合注入对量子阱发光峰位的影响 ,采用了组合技术和离子注入技术大大简化了制备工艺过程 ,这种发光芯片对于波分复用器件和建立离子注入数据库等方面都有重要的意义 .
The Al Ga As / Ga As single quantum well multiwavelength integrated chips fabricated by ion implantation and combination techniques are reported. More than 20 GaAs luminescent wavelengths from 787 ~ 72 4nm Ga As quantum well light-emitting unit, the effects of different doses of As and H ions separately and in combination on the emission peak of the quantum well were studied. The combination technology and ion implantation technology greatly simplified the preparation process Process, the light-emitting chip for wavelength division multiplexing devices and the establishment of ion implantation database and so has important significance.