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研究了 Cu O对 Sn O2 · Mg O· Nb2 O5压敏材料的密度、非线性特性、介电常数的影响。实验发现 ,适当掺杂 Cu O不仅能增大 Sn O2 · Mg O· Nb2 O5材料的致密度 ,而且能提高非线性系数 ,减小漏电流。掺 2 % Cu O(摩尔比 )时 ,Sn O2 · Mg O· Nb2 O5材料的致密度达到理论值的 93% ,非线性系数 α高达 9.5 ,压敏电压 V1 m A高于4 2 3V/ mm。在 2 0～ 2 0 0°C温度范围和 0 .1～ 10 0 0 k Hz频率范围 ,Sn O2 · Cu O· Mg O· Nb2 O5的介电常数变化很小 ,应用晶界缺陷势垒模型 ,对 Sn O2 · Cu O· Mg O· Nb2 O5材料压敏特性进行了解释。
The effects of CuO on the density, nonlinearity and dielectric constant of Sn O2 · Mg O · Nb 2 O 5 pressure-sensitive materials were investigated. Experiments show that proper doping of CuO can not only increase the density of SnO 2 · MgO · Nb 2 O 5 but also increase the nonlinear coefficient and decrease the leakage current. When 2% CuO (molar ratio) is added, the density of SnO2 · MgO · Nb2O5 material reaches 93% of the theoretical value, the nonlinear coefficient α is up to 9.5 and the voltage-dependent voltage V1 m A is higher than 423V / mm . The dielectric constant of SnO2.CuO.MgO.Nb2O5 changed very little in the temperature range of 2 0 ~ 2 0 0 ° C and in the frequency range of 0.1 ~ 10 0 0 k Hz. By using the grain boundary defect barrier model , The pressure-sensitive properties of SnO 2 · Cu O · Mg O · Nb 2 O 5 materials are explained.