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本文报告了采用两种液相外延方法在制备GaAs—Ga_(1-x)Al_xAs异质结时向三元系材料掺入少量P,使Ga_(1-x)Al_xAs变成Ga_(1-x)Al_xAs_(1-y)P_y。用X射线双晶和单晶衍射法分别测量了一系列样品,得出最佳晶格失配降到1×10~(-5),相应的失配应力为1.4×10~7达因/(厘米)~2。用俄歇电子谱仪测量Ga_(1-x)Al_xAs_(1-y)P_y的组分X,Y值,导出了X值和Y值的计算公式,得出样品的实验结果。在同一系统大致相同的条件下作了掺P和不掺P的比较,证明掺入最佳P量能大大改善异质结的质量,可望制得高效率长寿命的双异质结激光器。
In this paper, two kinds of liquid-phase epitaxy methods are reported to incorporate Ga (1-x) Al_xAs into Ga_ (1-x) Al_xAs into a ternary system ) Al_xAs_ (1-y) P_y. A series of samples were measured by X-ray twin crystal and single crystal diffraction, respectively, and the best lattice mismatch was reduced to 1 × 10 -5. The corresponding misfit stress was 1.4 × 10-7 dyne / (Cm) ~ 2. The composition X and Y of Ga_ (1-x) Al_xAs_ (1-y) P_y were measured by Auger electron spectrometer, and the formulas of X and Y were derived. The experimental results of the samples were obtained. The same system under the same conditions were made of P doped and not doped P compared to prove that the incorporation of the best P amount can greatly improve the quality of the heterojunction, is expected to be efficient and long life double heterostructure laser.