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用紫外光致荧光法可以检测出ＧａＰ∶Ｎ液相外延晶片的室温ＰＬ谱和ＰＬＥ谱，同时还能观测到可引起绿色发光效率下降的Ｆｅ、Ｃｕ和Ｃｒ杂质沾污的荧光谱。本文介绍了ＧａＰ∶Ｎ晶片的ＰＬ特性的多峰结构及其与Ｎ和Ｎ－Ｎ对等电子中心激子复合发光的对应关系。
The PL spectra and PLE spectra of GaP:N liquid-phase epitaxial wafers can be detected by UV-fluorescence spectroscopy. Fluorescence spectra of impurities contaminated by Fe, Cu and Cr, which can cause the decrease of green luminescence efficiency, can also be observed. This paper introduces the multimodal structure of PL properties of GaP: N wafers and their correspondence with the N and N-N equivalent electron excitons.