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利用化学溶液沉积技术在LaAlO3(001)单晶基片上外延生长了Bi2Sr2Co2O8热电薄膜并对其激光诱导电压效应进行了研究.热电性能测试表明该外延薄膜的室温电阻率和塞贝克系数均可以和优质单晶样品相比拟.此外,实验发现当用308nm,532nm,1064nm及10.6μm的激光辐照生长在斜切LaAlO3上的Bi2Sr2Co2O8外延薄膜表面时,可以在薄膜中观测到很强的横向开路电压信号.分析认为当入射激光光子能量(308,532和1064nm激光输出)大于Bi2Sr2Co2O8禁带宽度时,在Bi2Sr2Co2O8外延薄膜中观测到的激光诱导横向开路电压信号源于该薄膜热电效应和光电效应的综合贡献;而当入射激光光子能量(10.6μm激光输出)小于Bi2Sr2Co2O8禁带宽度时,在Bi2Sr2Co2O8外延薄膜中观测到的激光诱导横向开路电压信号主要源于薄膜的热电效应.以上结果表明Bi2Sr2Co2O8热电薄膜不仅在热电器件领域而且在宽波段激光光探测器领域都具有潜在的应用前景.
The Bi2Sr2Co2O8 thermoelectric thin film was epitaxially grown on the LaAlO3 (001) single crystal substrate by chemical solution deposition technique and its laser induced voltage effect was studied. The thermoelectric performance tests show that both the room temperature resistivity and the Seebeck coefficient of the epitaxial thin film can be high quality In addition, it was experimentally found that a strong lateral open-circuit voltage signal was observed in the thin film when grown on the surface of a Bi2Sr2Co2O8 epitaxial film grown on a chamfered LaAlO3 with laser light of 308 nm, 532 nm, 1064 nm and 10.6 μm The analysis suggests that the laser-induced lateral open-circuit voltage signal observed in the Bi2Sr2Co2O8 epitaxial thin film originates from the combined contribution of the thermoelectric and photovoltaic effects of the thin film when the incident laser photon energies (308, 532 and 1064 nm laser output) are greater than the forbidden band width of Bi2Sr2Co2O8 The laser-induced lateral open-circuit voltage signal observed in the Bi2Sr2Co2O8 epitaxial film is mainly due to the thermoelectric effect when the incident laser photon energy (10.6μm laser output) is less than the forbidden band width of Bi2Sr2Co2O8.The above results show that the Bi2Sr2Co2O8 thermoelectric film not only in the thermoelectric device Field but also in the field of wideband laser photodetectors Potential applications.