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制成了PbTiO_3铁电薄膜门FET,它是作为在室温下工作和在宽的频谱范围内具有红外灵敏度的红外探测器之用。在铂箔上用RF溅射法沉积PbTiO_3膜的介电常数为200,最大剩余极化为27微库/厘米~2。沉积在涂铂云母上的膜获得了电压响应率R和探测率D分别为330伏/瓦和1.5×10~8厘米赫~(1/2)/瓦(20赫、1赫)的热电响应。测量是从白炽灯光源通过Ge滤光器的红外光辐照下进行的。为控制电流沟道上的表面势,在SiMOSFET门上沉积了PbTiO_3薄膜。FET也具有R_v和D分别为390伏/瓦和3.5×10~5厘米赫~(1/2)/瓦的热电灵敏度。在CO_2激光器脉冲辐照下通过测量输出获得了上升时间为～3.5微米的快速响应。
PbTiO_3 ferroelectric thin film gate FETs have been fabricated for use as infrared detectors that operate at room temperature and have infrared sensitivity over a wide spectral range. The dielectric constant of PbTiO_3 deposited by RF sputtering on platinum foil was 200 and the maximum remanent polarization was 27 microseconds / cm ~ 2. The films deposited on platinum coated mica gave thermoelectric responses of a voltage response R and a detection D of 330 V / W and 1.5 X 10-8 cm / (1/2) / W (20 Hz, 1 Hz), respectively . The measurements were made from the incandescent light source irradiated with infrared light through a Ge filter. To control the surface potential on the current channel, a PbTiO 3 thin film was deposited on the SiMOSFET gate. FETs also have pyroelectric sensitivity of Rv and D of 390 V / W and 3.5x10-5 cm / (1/2) / W, respectively. A fast response with a rise time of ~3.5 μm was obtained by measuring the output of CO 2 laser pulsed radiation.