本文报道了一种新的Gal—_xAl_xAs液相外延方法。靠控制降温速度,可以在外延表面3—4μ处得到x值均匀甚至沿生长方向有上升趋势的外延层。其外延表面光亮、缺陷少、无机械损伤。由于上述过程都是在单一外延层上完成的,所以利用此方法可以大幅度降低成本,提高成品率。制成的器件在If=20mA时。总光通量一般为3—6mlum。予计效率还会进一步提高。 In this paper, a new method of liquid-phase epitaxy of Gal-_xAl_xAs has been reported. By controlling the cooling rate, an epitaxial layer with a uniform x value or even an upward trend along the growth direction can be obtained at an extension surface of 3-4 μ. Its epitaxial surface bright, less defects, no mechanical damage. As the above process is completed in a single epitaxial layer, so using this method can significantly reduce costs and improve yield. The resulting device is at If = 20mA. The total luminous flux is generally 3-6mlum. The expected efficiency will be further improved.