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We report on the performance of La2O3/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors(MOSHEMTs) and InAlN/GaN high electron mobility transistors(HEMTs).The MOSHEMT presents a maximum drain current of 961 mA/mm at Vgs = 4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at Vgs = 1 V and 131 mS/mm for the HEMT device,while the gate leakage current in the reverse direction could be reduced by four orders of magnitude.Compared with the HEMT device of a similar geometry,MOSHEMT presents a large gate voltage swing and negligible current collapse.
We report on the performance of La2O3 / InAlN / GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) and InAlN / GaN high electron mobility transistors (HEMTs). MOSHEMT presents a maximum drain current of 961 mA / mm at Vgs = 4 V and a maximum transconductance of 130 mS / mm compared with 710 mA / mm at Vgs = 1 V and 131 mS / mm for the HEMT device, while the gate leakage current in the reverse direction could be reduced by four orders of magnitude. Compared with the HEMT device of a similar geometry, MOSHEMT presents a large gate voltage swing and negligible current collapse.