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对不同掺杂浓度AlGaN/GaN HEMTs施加直流偏置应力,研究掺杂AlGaN/GaN HEMTs电流崩塌效应.实验表明,掺杂AlGaN势垒层对器件电流崩塌效应有明显的抑制作用,随着掺杂浓度增加,掺杂对电流崩塌效应的抑制作用越显著.这是因为对于掺杂AlGaN/GaN HEMT,表面态俘获电子将耗尽掺杂AlGaN层,从而能对2DEG起屏蔽作用.AlGaN体内杂质电离后留下正电荷也能进一步屏蔽表面态对沟道2DEG的影响.
The DC bias stress was applied to AlGaN / GaN HEMTs with different doping concentrations to study the current collapse effect of the doped AlGaN / GaN HEMTs. The experimental results show that the doped AlGaN barrier layer significantly inhibits the device current collapse effect, The more significant the doping effect on the current collapse effect is, the doping of the AlGaN layer in the surface-state state depletes the AlGaN / GaN HEMT so that it can shield the 2DEG. The impurity ionization Leaving a positive charge can further shield the surface of the channel 2DEG impact.