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The effects of different masks and patterns on the top stripping of GaAs microwire arrays fabricated by inductively coupled plasma etching for 20 min and 40 min are investigated.The results show that the mask layer is the main affect of the top stripping of the GaAs microwires in 40 min.Increasing the mask layers and reducing the photoresist layers can prevent top stripping and result in a suitable GaAs microwire array.
The effects of different masks and patterns on the top stripping of GaAs microwire arrays fabricated by inductively coupled plasma etching for 20 min and 40 min are investigated. The results show that the mask layer is the main affect of the top stripping of the GaAs microwires in 40 min. Increasing the mask layers and reducing the photoresist layers can prevent top stripping and result in a suitable GaAs microwire array.