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在Si衬底上利用磁控溅射的方法沉积1.5 nm厚度的Ag膜用以阻挡Si衬底被氧化。采用常压金属有机化学气相沉积法(MOVCD),在Ag/Si(111)衬底上成功地生长出马赛克结构的ZnO薄膜。用光学显微镜观察表面形貌,结果显示有带晶向特征的微裂纹,裂纹密度为100 cm-1。依据X射线晶体衍射的结果,薄膜结晶质量良好,呈C轴高度择优取向。用双晶X射线衍射得到(002)面的ω扫描半峰宽为1.37°。温度10 K时光致发光谱(PL)观察到自由激子、束缚激子发射及它们的声子伴线。结果表明,金属有机化学气相沉积法方法在Si(111)衬底上制备ZnO薄膜时,Ag是一种有效的缓冲层。
A 1.5 nm-thick Ag film was deposited on the Si substrate by magnetron sputtering to block the Si substrate from being oxidized. A ZnO thin film with Mosaic structure was successfully grown on Ag / Si (111) substrate by atmospheric pressure metalorganic chemical vapor deposition (MOVCD). The morphology of the surface was observed with an optical microscope. The results showed that there were microcracks with crystal orientation with a crack density of 100 cm-1. According to the result of X-ray crystal diffraction, the crystal quality of the film is good and the C-axis is highly preferred. The half width of ω scan of (002) plane obtained by twin crystal X-ray diffraction was 1.37 °. Photoluminescence spectra (PL) at 10 K observed free excitons, bound exciton emission and their phonon-associated lines. The results show that Ag is an effective buffer layer for the preparation of ZnO thin films on Si (111) substrates by metal organic chemical vapor deposition.