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内建电势是金属-半导体接触和P-N结半导体的基本物理参数之一.虽然理论上已对Ge、Si及GaAs等材料在单边突变结和线性缓变结两种特殊情况下给出内建电势的近似值,但对实际情形,总还需要通过实验确定.无论是测量 P-N结半导体或是金属-半导体的内建电势,通常都是采用电容-电压法.并且迄今仍在应用.这种方法,首先是将测得的C-V数据在图上画出1/C~2与V的关系,然后按外推法求出内建电势.方法虽然较简单,但不精确.即使杂质浓度分布非常均匀,可是由于其它方面的因素影响,往往并不能获得1/C~2随V变化的直线关系.此外,对被测样品的反向特性的要求还必须
The built-in potential is one of the basic physical parameters of the metal-semiconductor contact and the PN junction semiconductor Although the theory of Ge, Si, GaAs and other materials has been given in two special cases of unilateral mutation and linear slow junction However, in practice, the total needs to be determined experimentally. Whether it is measuring the built-in potential of a PN junction semiconductor or a metal-semiconductor, a capacitance-voltage method is usually adopted and is still in use so far. , The first is to plot the measured CV data on the graph 1 / C ~ 2 and V relationship, and then calculated by extrapolation built-in potential method is relatively simple, but not accurate, even if the impurity concentration distribution is very uniform , But because of other factors, often do not get 1 / C ~ 2 linear relationship with the change of V. In addition, the reverse characteristics of the measured sample must also be