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由于钴(Co)具有优良的化学物理特性成为下一代极大规模集成电路阻挡层材料之一。Co在碱性抛光液中易被氧化进而钝化其表面,导致Co的去除速率降低甚至低于Cu的去除速率。针对上述问题,研究了螯合剂和H2O2对Co去除速率的影响以及不同体积分数表面活性剂对Co粗糙度的影响。优化并确定了当抛光液p H值为9,Si O2磨料质量分数为4%,螯合剂、H2O2以及表面活性剂的体积分数分别为3.0%、0.05%和1.5%时,Co和Cu的去除速率分别为56.7 nm·min-1和38.3 nm·min-1。结果表明,螯合剂和H2O2协同作用提高了Co的去除速率并降低了Co和Cu之间的电位差,有效地控制了二者之间的电偶腐蚀。
Due to its excellent chemical and physical properties, cobalt (Co) has become one of the next generation of very large integrated circuit barrier materials. Co is easily oxidized in alkaline polishing solution to passivate its surface, resulting in the removal of Co even lower than the removal rate of Cu. In view of the above problems, the effect of chelating agent and H2O2 on Co removal rate and the influence of different volume fractions of surfactant on Co roughness were studied. The removal of Co and Cu was optimized and determined when the pH value of the polishing solution was 9, the mass fraction of Si O2 abrasive was 4%, the volume fraction of chelating agent, H2O2 and surfactant were 3.0%, 0.05% and 1.5% The rates were 56.7 nm · min-1 and 38.3 nm · min-1, respectively. The results show that the synergistic effect of chelating agent and H2O2 improves the removal rate of Co and reduces the potential difference between Co and Cu, effectively controlling the galvanic corrosion between the two.