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本文报道了对射频溅射α—Si:F薄膜光电导特性初步研究的结果。含氢和不含氢的样品是在Ar+SiF_4和Ar+SiF_4+H_2两种混合气体中分别制备的。对所有制得的样品测量了室温暗电导和在λ=6328及光照射样品表面功率密度为0.5mW/cm~2条件下测量了相应的光电导。实验结果表明(1)溅射α—Si:F薄膜有显著的光电响应;(2)光电导和暗电导的比值随气体的流量而接近成比例地变化。得到了最大σ_(ph)/σ_D比值为14000的薄膜样品;(3)溅射气氛中加入氢气对所得薄膜的光电导特性有一定影响。有关结果可用SiF_3、SiF_2H和SiFH_2键合组态的电子态不同解释。
This paper reports the results of a preliminary study on the photoconductivity of RF-sputtered α-Si: F thin films. Hydrogen-containing and hydrogen-free samples were prepared separately from the mixed gases Ar + SiF_4 and Ar + SiF_4 + H_2. All of the prepared samples were measured for dark conductance at room temperature and the corresponding photoconductivity was measured at λ = 6328 and a power density of 0.5 mW / cm 2 on the surface of the irradiated sample. The experimental results show that (1) the sputtered α-Si: F thin film has a significant photoelectric response; (2) the ratio of photoconductivity to dark conductance varies nearly in proportion to the gas flow rate. The maximum film thickness of σ_ (ph) / σ_D is 14000. (3) The photoconductivity of the obtained films is affected by the addition of hydrogen in the sputtering atmosphere. The results can be used SiF_3, SiF_2H and SiFH_2 bonding configuration of electronic states different interpretation.